Plastic N Channel BC3400 350mW 5.8A Low Voltage Mosfet
Brand Name:Huixin
Certification:ISO9001, ISO4001, IATF16949, UL
Model Number:BC3400
Minimum Order Quantity:3000pcs
Delivery Time:2-4Weeks
Payment Terms:T/T, Paypal, Cash
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Location:
Dongguan Guangdong China
Address:
Tianan Cyber Park, No.1 Huangjin Road, Nancheng District, Dongguan City, Guangdong Province , China
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Product Details
SOT-23 Plastic-Encapsulate MOSFETS
BC3400 N-Channel Enhancement Mode Field Effect Transistor
FEATURES
High dense cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability
Maximum ratings ( Ta=25℃ unless otherwise noted)
| Parameter | Symbol | Value | Unit | ||||||||||||||||||||||||||||
| Drain-Source Voltage | VDS | 30 | V | ||||||||||||||||||||||||||||
| Gate-Source Voltage | VGS | ±12 | V | ||||||||||||||||||||||||||||
| Continuous Drain Current | ID | 5.8 | A | ||||||||||||||||||||||||||||
| Drain Current-Pulsed (note 1) | IDM | 30 | A | ||||||||||||||||||||||||||||
| Power Dissipation | PD | 350 | mW | ||||||||||||||||||||||||||||
| Thermal Resistance from Junction to Ambient (note 2) | RθJA | 357 | ℃/W | ||||||||||||||||||||||||||||
| Junction Temperature | TJ | 150 | ℃ | ||||||||||||||||||||||||||||
| Storage Temperature | TSTG | -55~+150 | ℃ | ||||||||||||||||||||||||||||
Electrical characteristics (Ta=25℃ unless otherwise noted)
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units | ||||||||||||||||||||||||
| Off Characteristics | ||||||||||||||||||||||||||||||
| Drain-source breakdown voltage | V(BR) DSS | VGS = 0V, ID =250µA | 30 | V | ||||||||||||||||||||||||||
| Zero gate voltage drain current | IDSS | VDS =24V,VGS = 0V | 1 | µA | ||||||||||||||||||||||||||
| Gate-source leakage current | IGSS | VGS =±12V, VDS = 0V | ±100 | nA | ||||||||||||||||||||||||||
| On characteristics | ||||||||||||||||||||||||||||||
| Drain-source on-resistance (note 3) | RDS(on) | VGS =10V, ID =5.8A | 35 | mΩ | ||||||||||||||||||||||||||
| VGS =4.5V, ID =5A | 40 | mΩ | ||||||||||||||||||||||||||||
| Forward tranconductance | gFS | VDS =5V, ID =5A | 8 | S | ||||||||||||||||||||||||||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250µA | 0.7 | 1.4 | V | |||||||||||||||||||||||||
| Dynamic Characteristics (note 4,5) | ||||||||||||||||||||||||||||||
| Input capacitance | Ciss | VDS =15V,VGS =0V,f =1MHz | 1050 | pF | ||||||||||||||||||||||||||
| Output capacitance | Coss | 99 | pF | |||||||||||||||||||||||||||
| Reverse transfer capacitance | Crss | 77 | pF | |||||||||||||||||||||||||||
| Gate resistance | Rg | VDS =0V,VGS =0V,f =1MHz | 3.6 | Ω | ||||||||||||||||||||||||||
| Switching Characteristics (note 4,5) | ||||||||||||||||||||||||||||||
| Turn-on delay time | td(on) | VGS=10V,VDS=15V, RL=2.7Ω,RGEN=3Ω | 5 | ns | ||||||||||||||||||||||||||
| Turn-on rise time | tr | 7 | ns | |||||||||||||||||||||||||||
| Turn-off delay time | td(off) | 40 | ns | |||||||||||||||||||||||||||
| Turn-off fall time | tf | 6 | ns | |||||||||||||||||||||||||||
| Drain-source diode characteristics and maximum ratings | ||||||||||||||||||||||||||||||
| Diode forward voltage (note 3) | VSD | IS=1A,VGS=0V | 1 | V | ||||||||||||||||||||||||||
Note :
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t < 5 sec.
3. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t < 5 sec.
3. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
Plastic N Channel BC3400 350mW 5.8A Low Voltage Mosfet
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