lustrous 3030 720-740nm Smd LED Light Chip 350ma 2v
Brand Name:PHOENIX
Certification:ANSI/ESDA/JEDEC JS-001
Model Number:CERAMIC3030
Minimum Order Quantity:5000PCS
Delivery Time:7-10 DAYS
Payment Terms:Western Union, MoneyGram, T/T
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Location:
Suzhou Jiangsu China
Address:
Bld#20,NO 88 Lingshan road ,wuzhong district,suzhou, jiangsu ,China
Supplier`s last login times:
within 26 hours
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Product Details
2V 350MA 1.5W CERAMIC3030 0.4-0.6LM 720-740NM SMD LED CHIP FOR PLANT LIGHTING
Characteristic
Professional plant led:
Dark blue (450 nm) and ultra red (660 nm) versions provide the
light required for photosynthesis
The far infrared (730 nm) version can control the whole process of
plants from germination to vegetative growth and then to flowerin
EQ white light can realize humanized working environment
High energy efficiency( μ mol/J)
Maximum drive current high
Low thermal resistance
Multiple radiation angles - 80 °, 120 ° and 150 ° wide illumination
characteristics
Highly reliable ceramic package with long service life and
corrosion resistance
Rugged even in wet environments
In addition, it also provides blue light, true green light, yellow
light, red light and other versions, which are suitable for special
lighting needs
Optimum heat / cold flux coefficient (85 ° C ~ 25 ° C)
Maximum Ratings
Parameter Symbol Values
| Operating Temperature | Top | min. max. | -40 °C 125 °C |
| Storage Temperature | Tstg | min. max. | -40 °C 125 °C |
| Junction Temperature | T | max. | 135 °C |
| Forward current | I | min. max. | 100 mA 500 mA |
Surge Current t ≤ 10 µs; D = 0.005 ; TJ = 25 °C | FS | max. | 700 mA |
| Reverse voltage 2) | V | Not designed for reverse operation | |
ESD withstand voltage acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 3B) | ESD | 8 kV |
Characteristics
I = 700 mA; TJ = 25 °C
Parameter Symbol Values
| Peak Wavelength | λpeak typ. 730 nm |
Centroid Wavelength 3) I = 350 mA | λcentroid min. 710 nm typ. 727 nm max. 740 nm |
Dominant Wavelength 3) I = 350 mA | λdom typ. 35 nm |
| Spectral Bandwidth at rel,max | ∆λ typ. 20 nm |
| Viewing angle at 50% IV | 2φ typ. 140 ° |
Forward Voltage 4) I = 350 mA | 1.8V 2.00V 2.30V |
| Reverse current 2) | Not designed for reverse operation |
| Electrical thermal resistance junction/solderpoint with efficiency ηe = 74 % | RthJS elec. typ. 1.3 K / W |
Forward Voltage Groups
Group Forward Voltage 4)
I = 350 mA
| 1.80 V | 1.90 V |
| 1.90 V | 2.00 V |
| 2.00 V | 2.10 V |
| 2.10 V | 2.20 V |
Centroid
Group
Centroid Wavelength 3)
I = 350 mA
λcentroid
| 710NM | 740NM |
Relative Spectral Emission
Irel = f (λ); IF = 350 mA; TJ = 25 °C
Radiation Characteristics
Irel = f (ϕ); TJ = 25 °C
Dimensional Drawing
Further Information:
Approximate Weight: 28.0 mg
Package marking: Anode
Corrosion test:Class: 3BTest condition: 40°C / 90 % RH / 15 ppm H2S / 14 days (stricter than IEC 60068-2-43)
ESD advice: The device is protected by ESD device which is connected in parallel to the Chip.
Reflow Soldering Profile
Product complies to MSL Level 2 acc. to JEDEC J-STD-020E
Profile Feature Symbol Pb-Free (SnAgCu) Assembly Unit
Minimum Recommendation Maximum
Ramp-up rate to preheat*) 2 25 °C to 150 °C | 3 | K/s |
tS 60 100 T to T | 120 | s |
Ramp-up rate to peak*) T to T 2 | 3 | K/s |
| Liquidus temperature TL 217 | °C | |
| Time above liquidus temperature tL 80 | 100 | s |
| Peak temperature T 245 | 260 | °C |
Time within 5 °C of the specified peak 10 20 temperature TP - 5 K | 30 | s |
Ramp-down rate* 3 T to 100 °C | 6 | K/s |
Time 25 °C to TP | 480 | s |
All temperatures refer to the center of the package, measured on the top of the component * slope calculation DT/Dt: Dt max. 5 s; fulfillment for the whole T-range
lustrous 3030 720-740nm Smd LED Light Chip 350ma 2v
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