15ns 108V NPN PNP Transistor Texas Instruments LM5109BQNGTTQ1
Brand Name:Texas Instruments
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Model Number:LM5109BQNGTTQ1
Minimum Order Quantity:1PCS
Delivery Time:2-7 work days
Payment Terms:T/T
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Shenzhen China
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7F, Building F, Longjing Science park, 335 Bulong Road, Ma Antang Community, Bantian Street, Longgang District, Shenzhen, China
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NPN PNP Transistor Texas Instruments/TI LM5109BQNGTTQ1
| ECAD Module | PCB Symbol,Footprint & 3D Model |
| Fake Threat In the Open Market | 34 pct. |
| Supply and Demand Status | Limited |
| Popularity | Medium |
| Manufacturer Homepage | www.ti.com |
| Win Source Part Number | 1200388-LM5109BQNGTTQ1 |
| MSL Level | 1 (Unlimited) |
| Manufacturer Pack Quantity | 1 |
| Family Part Number | LM5109 |
| Supplier Device Package | 8-WSON (4x4) |
| Manufacturer Package | 8-WFDFN Exposed Pad |
| Mounting Style | SMD |
| Temperature Range - Operating | -40°C ~ 125°C |
| Rise / Fall Time | 15ns, 15ns |
| High Side Voltage - Max (Bootstrap) | 108V |
| Input Type | Non-Inverting |
| Current - Peak Output (Source, Sink) | 1A, 1A |
| Logic Voltage - VIL, VIH | 0.8V, 2.2V |
| Supply Voltage (V) | 8V ~ 14V |
| Gate Type | N-Channel MOSFET |
| Number of Drivers | 2 |
| Channel Type | Independent |
| Driven Configuration | Half-Bridge |
| Packaging | Reel |
| Manufacturer | Texas Instruments |
| Categories | Integrated Circuits |
Features for the LM5109B-Q1
- Qualified for Automotive Applications
- AEC-Q100 Qualified With the Following Results
- Device Temperature Grade 1
- Device HBM ESD Classification Level 1C
- Device CDM ESD Classification Level C4A
- Drives Both a High-Side and Low-Side N-Channel
MOSFET - 1-A Peak Output Current (1.0-A Sink/1.0-A
Source) - Independent TTL/CMOS Compatible Inputs
- Bootstrap Supply Voltage to 108-V DC
- Fast Propagation Times (30 ns Typical)
- Drives 1000-pF Load with 15-ns Rise and Fall
Times - Excellent Propagation Delay Matching (2 ns
Typical) - Supply Rail Under-Voltage Lockout
- Low Power Consumption
- Thermally-Enhanced WSON-8 Package
Description for the LM5109B-Q1
The LM5109B-Q1 is a cost effective, high voltage gate driver designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90 V. The outputs are independently controlled with TTL/CMOS compatible logic input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Under-voltage lockout is provided on both the low-side and the high-side power rails. The device is available in the thermally enhanced WSON(8) packages.
15ns 108V NPN PNP Transistor Texas Instruments LM5109BQNGTTQ1
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