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EU RoHS | Compliant |
ECCN (US) | EAR99 |
Part Status | Active |
SVHC | Yes |
Automotive | No |
PPAP | No |
Product Category | Power MOSFET |
Configuration | Dual |
Process Technology | NexFET |
Channel Mode | Enhancement |
Channel Type | P |
Number of Elements per Chip | 2 |
Maximum Gate Source Voltage (V) | -6 |
Maximum Gate Threshold Voltage (V) | 1.1 |
Maximum Continuous Drain Current (A) | 3.9 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum IDSS (uA) | 1 |
Maximum Drain Source Resistance (MOhm) | 54@4.5V |
Typical Gate Charge @ Vgs (nC) | 2.9 |
Typical Input Capacitance @ Vds (pF) | 458 |
Maximum Power Dissipation (mW) | 700 |
Typical Fall Time (ns) | 16 |
Typical Rise Time (ns) | 8.6 |
Typical Turn-Off Delay Time (ns) | 32.1 |
Typical Turn-On Delay Time (ns) | 12.8 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Packaging | Tape and Reel |
Supplier Package | DSBGA |
Pin Count | 9 |
Standard Package Name | BGA |
Mounting | Surface Mount |
Package Height | 0.28(Max) |
Package Length | 1.5 |
Package Width | 1.5 |
PCB changed | 9 |
Lead Shape | Ball |