IPD90R1K2C3 High Power MOSFET , AMPAK Wifi Module N-CH 900V 5.1A 3 Pin DPAK T/R

Brand Name:Infineon
Model Number:IPD90R1K2C3
Minimum Order Quantity:package qty
Delivery Time:2 weeks
Payment Terms:T/T
Place of Origin:CHINA
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Location: Shenzhen China
Address: Internatinal Logistics Center A-702, No. 1 South China Road, ShenZhen, China
Supplier`s last login times: within 2 hours
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Product Details

IPD90R1K2C3 Infineon Trans MOSFET N-CH 900V 5.1A 3-Pin(2+Tab) DPAK T/R

Product Technical Specifications

EU RoHSCompliant with Exemption
ECCN (US)EAR99
Part StatusActive
SVHCYes
SVHC Exceeds ThresholdYes
AutomotiveNo
PPAPNo
Product CategoryPower MOSFET
ConfigurationSingle
Process TechnologyCoolMOS
Channel ModeEnhancement
Channel TypeN
Number of Elements per Chip1
Maximum Drain Source Voltage (V)900
Maximum Gate Source Voltage (V)±20
Maximum Gate Threshold Voltage (V)3.5
Operating Junction Temperature (°C)-55 to 150
Maximum Continuous Drain Current (A)5.1
Maximum Gate Source Leakage Current (nA)100
Maximum IDSS (uA)1
Maximum Drain Source Resistance (MOhm)1200@10V
Typical Gate Charge @ Vgs (nC)28@10V
Typical Gate Charge @ 10V (nC)28
Typical Input Capacitance @ Vds (pF)710@100V
Maximum Power Dissipation (mW)83000
Typical Fall Time (ns)40
Typical Rise Time (ns)20
Typical Turn-Off Delay Time (ns)400
Typical Turn-On Delay Time (ns)70
Minimum Operating Temperature (°C)-55
Maximum Operating Temperature (°C)150
PackagingTape and Reel
Maximum Positive Gate Source Voltage (V)20
Maximum Diode Forward Voltage (V)1.2
Pin Count3
Standard Package NameTO-252
Supplier PackageDPAK
MountingSurface Mount
Package Height2.41(Max)
Package Length6.73(Max)
Package Width6.22(Max)
PCB changed2
TabTab
Lead ShapeGull-wing
China IPD90R1K2C3 High Power MOSFET , AMPAK Wifi Module N-CH 900V 5.1A 3 Pin DPAK T/R supplier

IPD90R1K2C3 High Power MOSFET , AMPAK Wifi Module N-CH 900V 5.1A 3 Pin DPAK T/R

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