TC58NYG0S3HBAI6 Toshiba Parallel Nand Flash 1.8V 1G Bit 128M X 8 67 Pin VFBGA
Brand Name:Toshiba
Model Number:TC58NYG0S3HBAI6
Minimum Order Quantity:package qty
Delivery Time:2 weeks
Payment Terms:T/T
Place of Origin:THAILAND
Contact Now
Add to Cart
Active Member
Location:
Shenzhen China
Address:
Internatinal Logistics Center A-702, No. 1 South China Road, ShenZhen, China
Supplier`s last login times:
within 2 hours
Product Details
Company Profile
Product Details
TC58NYG0S3HBAI6 Toshiba NAND Flash Parallel 1.8V 1G-bit 128M x 8 67-Pin VFBGA
Product Technical Specifications
| EU RoHS | Compliant |
| ECCN (US) | 3A991.b.1.a |
| Part Status | Active |
| Automotive | Unknown |
| PPAP | Unknown |
| Cell Type | NAND |
| Chip Density (bit) | 1G |
| Architecture | Sectored |
| Boot Block | No |
| Block Organization | Symmetrical |
| Address Bus Width (bit) | 28 |
| Sector Size | 128Kbyte x 1024 |
| Page Size | 2Kbyte |
| Number of Bits/Word (bit) | 8 |
| Number of Words | 128M |
| Programmability | Yes |
| Timing Type | Asynchronous |
| Maximum Erase Time (S) | 0.01/Block |
| Maximum Programming Time (ms) | 0.7 |
| Process Technology | CMOS |
| Interface Type | Parallel |
| Minimum Operating Supply Voltage (V) | 1.7 |
| Typical Operating Supply Voltage (V) | 1.8 |
| Maximum Operating Supply Voltage (V) | 1.95 |
| Programming Voltage (V) | 1.7 to 1.95 |
| Operating Current (mA) | 30 |
| Program Current (mA) | 30 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 85 |
| Command Compatible | No |
| ECC Support | Yes |
| Support of Page Mode | No |
| Supplier Package | VFBGA |
| Pin Count | 67 |
| Mounting | Surface Mount |
| Package Height | 0.7(Max) |
| Package Length | 8 |
| Package Width | 6.5 |
| PCB changed | 67 |
TC58NYG0S3HBAI6 Toshiba Parallel Nand Flash 1.8V 1G Bit 128M X 8 67 Pin VFBGA
Inquiry Cart
0