C Plane High Smoothness And Cleanliness Sapphire Substrate For Semiconductor

Brand Name:BonTek
Certification:ISO:9001
Model Number:Sapphire (Al2O3)
Minimum Order Quantity:5 Pieces
Delivery Time:1-4 weeks
Payment Terms:T/T
Contact Now

Add to Cart

Verified Supplier
Location: Hangzhou Shanghai China
Address: Room 1106, CIBC, No.198 Wuxing Rd, Hangzhou, P.R.China
Supplier`s last login times: within 30 hours
Product Details Company Profile
Product Details

C Plane High Smoothness And High Cleanliness Sapphire Substrate For Semiconductor


Sapphire wafers are mainly suitable for the research and development of new semiconductor devices, offering high specifications such as high smoothness and high cleanliness in addition to the traditional sapphire substrate standard grades.


Main Features

• High strength, high hardness, high wear resistance (hardness second only to diamond)

• High transmittance (light transmittance in the ultraviolet to infrared range)

• High corrosion resistance (high tolerance to acid, alkali, plasma)

• High insulation (insulator, not easy to conduct electricity)

• High heat resistance (melting point 2050℃) Heat conductivity (40 times of glass)


Specification

• Standard size (φ2 ",3 ",4 ",6 ",8 ",12 "), other special size, corner shape and other shapes can be corresponding.

• Can correspond to a variety of plane orientation: c-plane, r-plane, m-plane, a-plane

• Double-sided grinding, single-sided grinding

• Customizable punching



Crystal Materials99,996% of Al2O3,High Purity, Monocrystalline, Al2O3
Crystal qualityInclusions, block marks, twins, Color, micro-bubbles and dispersal centers are non-existent
Diameter2inch3inch4inch5inch ~ 7inch
50.8± 0.1mm76.2±0.2mm100±0.3mmIn accordance with the provisions of standard production
Thickness430±15µm550±15µm650±20µmCan be customized by customer
OrientationC- plane (0001) to M-plane (1-100) or A-plane(1 1-2 0) 0.2±0.1° /0.3±0.1°, R-plane (1-1 0 2), A-plane (1 1-2 0 ), M-plane(1-1 0 0), Any Orientation , Any angle
Primary flat length16.0±1mm22.0±1.0mm32.5±1.5 mmIn accordance with the provisions of standard production
Primary flat OrientationA-plane (1 1-2 0 ) ± 0.2°
TTV≤10µm≤15µm≤20µm≤30µm
LTV≤10µm≤15µm≤20µm≤30µm
TIR≤10µm≤15µm≤20µm≤30µm
BOW≤10µm≤15µm≤20µm≤30µm
Warp≤10µm≤15µm≤20µm≤30µm
Front SurfaceEpi-Polished (Ra< 0.2nm)
Back SurfaceFine ground (Ra=0.5 to 1.2 µm), Epi-Polished (Ra< 0.2nm)
NoteCan provide high-quality sapphire substrate wafer according to customers' specific requirement

PHYSICAL PROPERTIES

Density3.97 g/cm3
Melting Point2040 degrees C
Thermal Conductivity27.21 W/(m x K) at 300 K
Thermal Expansion5.6 x 10 -6 /K (parallel C-axis) & 5.0 (perpendicular C-axis) x 10 -6 /K
HardnessKnoop 2000 kg/mm 2 with 2000g indenter
Specific Heat Capacity419 J/(kg x K)
Dielectric Constant11.5 (parallel C-axis) 9.4 (perpendicular C-axis) at 1MHz
Young's Modulus (E)335 GPa
Shear Modulus (G)148.1 GPa
Bulk Modulus (K)240 GPa
Elastic CoefficientsC11=496 C12=164 C13=115
C33=498 C44=148
Apparent Elastic Limit275 MPa (40,000 psi)
Poisson Ratio0.25


Acceptance Check

China C Plane High Smoothness And Cleanliness Sapphire Substrate For Semiconductor supplier

C Plane High Smoothness And Cleanliness Sapphire Substrate For Semiconductor

Inquiry Cart 0