M29DW323 M29DW323DT70N6 Micron FLASH NOR Memory Integrated circuits IC TSOP48 Electronic components

M29DW323DT70N6E Micron M29DW323 FLASH NOR Memory Integrated circuits IC TSOP48 Electronic components

-M29DW323DT M29DW323DB 32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory

The M29DW323D is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The device features an asymmetrical block architecture. The M29DW323D has an array of 8 parameter and 63 main blocks and is divided into two Banks, A and B, providing Dual Bank operations. While programming or erasing in Bank A, read operations are possible in Bank B and vice versa. Only one bank at a time is allowed to be in program or erase mode.

M29DW323D has an extra 32 KWord (x16 mode) or 64 KByte (x8 mode) block, the Extended Block, that can be accessed using a dedicated command. The Extended Block can be protected and so is useful for storing security information.

However the protection is irreversible, once protected the protection cannot be undone

. Each block can be erased independently so it is possible to preserve valid data while old data is erased.

The blocks can be protected to prevent accidental Program or Erase commands from modifying the memory.

Program and Erase commands are written to the Command Interface of the memory.

An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents.

The end of a program or erase operation can be detected and any error conditions identified.

The command set required to control the memory is consistent with JEDEC standards.

Chip Enable, Output Enable and Write Enable signals control the bus operation of the memory.

They allow simple connection to most microprocessors, often without additional logic.

The memory is offered in TSOP48 (12x20mm), and TFBGA48 (6x8mm, 0.8mm pitch) packages.

FEATURES SUMMARY:

SUPPLY VOLTAGE
– VCC = 2.7V to 3.6V for Program, Erase and Read
– VPP =12V for Fast Program (optional)

„ ACCESS TIME: 70ns

„ PROGRAMMING TIME
– 10µs per Byte/Word typical
– Double Word/ Quadruple Byte Program

„ MEMORY BLOCKS
– Dual Bank Memory Array: 8Mbit+24Mbit
– Parameter Blocks (Top or Bottom Location)

„ DUAL OPERATIONS
– Read in one bank while Program or Erase in other

„ ERASE SUSPEND and RESUME MODES
– Read and Program another Block during Erase Suspend

„ UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming

„ VPP/WP PIN for FAST PROGRAM and WRITE PROTECT

„ TEMPORARY BLOCK UNPROTECTION MODE

„ COMMON FLASH INTERFACE– 64 bit Security Code

„ EXTENDED MEMORY BLOCK
– Extra block used as security block or to store additional information

„ LOW POWER CONSUMPTION– Standby and Automatic Standby

„ 100,000 PROGRAM/ERASE CYCLES per BLOCK

„ ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29DW323DT: 225Eh
– Bottom Device Code M29DW323DB:225Fh

IC FLASH 32MBIT PARALLEL 48TSOP-M29DW323DT70N6E Specification:

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Ordering Information:

About Micron Technology

Micron makes innovative memory and storage solutions that are helping to drive today’s most significant and disruptive technology breakthroughs, such as artificial intelligence, the Internet of Things, self-driving cars, personalized medicine—even space exploration. By pioneering faster and more efficient ways to collect, store and manage data, they’re helping to revolutionize and improve the way the world communicates, learns and advances.

Micron Technology Product Categories:

Integrated Circuits (ICs)

Memory Cards, Modules

Optoelectronics

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Environmental & Export Classifications

Substitutes integrated circuits IC part number:
S29JL032J70TFI010 / S29JL032J70TFI310
We sell the industry’s broadest portfolio of memory and storage technologies: DRAM, NAND, and NOR memory ic. With close industry partnerships and memory solutions expertise, our unique insight gives us the ability to address your most challenging needs.

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