BSC070N10NS3GATMA1 Infineon OptiMOS Power MOSFET IC

Brand Name:Infineon
Certification:ROHS
Model Number:BSC070N10NS3GATMA1
Minimum Order Quantity:1pieces
Delivery Time:5 working days
Payment Terms:T/T, Western Union
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Location: Shenzhen Hongkong China
Address: 1607B Coastal Buidling East Block Nanshan District Shenzhen China 518000
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Product Details

07N10NS BSC070N10NS3GATMA1 Infineon's OptiMOS power MOSFET N-Channel 100 V 90A 114W PG-TDSON-8 IC


Description:

Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS.

Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit).


Potential Applications:
Synchronous rectification for AC-DC SMPS
Motor control for 48V–80V systems (i.e. domestic vehicles, power-tools, trucks)
Isolated DC-DC converters (telecom and datacom systems
Or-ing switches and circuit breakers in 48V systems
Class D audio amplifiers
Uninterruptable power supplies (UPS)


Summary of Features:
Excellent switching performance
World’s lowest R DS(on)
Very low Q g and Q gd
Excellent gate charge x R DS(on) product (FOM)
RoHS compliant-halogen free
MSL1 rated 2

Benefits

Environmentally friendly
Increased efficiency
Highest power density
Less paralleling required
Smallest board-space consumption
Easy-to-design products


Specifications:

Category
 
Transistors - FETs, MOSFETs - Single
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
3.5V @ 75µA
Gate Charge (Qg) (Max) @ Vgs
55 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4000 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
114W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8-1
Package / Case
8-PowerTDFN
Base Product Number
BSC070
ParametricsBSC070N10NS3G
Ciss3000 pF
Coss520 pF
ID (@25°C) max90 A
IDpuls max360 A
Operating Temperature min max-55 °C 150 °C
Ptot max114 W
PackageSuperSO8 5x6
PolarityN
QG (typ @10V)42 nC
RDS (on) (@10V) max7 mΩ
Rth1.1 K/W
VDS max100 V
VGS(th) min max2.7 V 2 V 3.5 V

China BSC070N10NS3GATMA1 Infineon OptiMOS Power MOSFET IC supplier

BSC070N10NS3GATMA1 Infineon OptiMOS Power MOSFET IC

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