V20PWM45 Vishay Semiconductor TMBS Trench MOS Barrier Schottky Rectifier

Brand Name:Vishay General Semiconductor
Certification:ROHS
Model Number:V20PWM45-M3/I V20PWM45HM3/I
Minimum Order Quantity:10
Delivery Time:2-15days
Payment Terms:T/T, Western Union
Contact Now

Add to Cart

Verified Supplier
Location: Shenzhen Hongkong China
Address: 1607B Coastal Buidling East Block Nanshan District Shenzhen China 518000
Supplier`s last login times: within 28 hours
Product Details Company Profile
Product Details

V20PWM45 V20PWM45C-M3/I Vishay Semiconductor High Current Density TMBS Trench MOS Barrier Schottky Rectifier DPAK Discrete Semiconductor Products

V20PWM45 :High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.35 V at IF = 5 A
V20PWM45C High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.39 V at IF = 5 A

APPLICATIONS
For use in low voltage high frequency DC/DC converters,
freewheeling diodes, and polarity protection applications

FEATURES
• Very low profile - typical height of 1.3 mm
• Trench MOS Schottky technology
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization


Description
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Features :
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D-Pak IRLR3915PbF I-Pak IRLU3915PbF Lea

Product Technical Specifications

Category
Discrete Semiconductor Products
 
Diodes - Rectifiers - Single
Mfr
Vishay General Semiconductor - Diodes Division
Series
Automotive, AEC-Q101, eSMP®, TMBS®
Package
Tape & Reel (TR)
Part Status
Active
Diode Type
Schottky
Voltage - DC Reverse (Vr) (Max)
45 V
Current - Average Rectified (Io)
20A
Voltage - Forward (Vf) (Max) @ If
660 mV @ 20 A
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr
700 µA @ 45 V
Capacitance @ Vr, F
3100pF @ 4V, 1MHz
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
SlimDPAK
Operating Temperature - Junction
-40°C ~ 175°C
Base Product Number
V20PWM45
Part numberV20PWM45-M3/I V20PWM45HM3/I
Base part numberV20PWM45C-M3/I
EU RoHSCompliant with Exemption
ECCN (US)EAR99
Part StatusActive
HTS8541.29.00.95






More part number for General Semiconductor:

Part numberMFGPackage Type
BYV26CVISHAY SemiconductorsSOD-57
BYV26EGPVISHAY SemiconductorsDO-15
BYV26E-TAPVISHAY SemiconductorsSOD-57
BYV26EGPVISHAY SemiconductorsDO-15
BYV26E-TAPVISHAY SemiconductorsSOD-57
BYV26C-TAPVISHAY SemiconductorsSOD-57
SI2309CDS-T1-GE3VISHAY SemiconductorsSOT-23
SI2301CDS-T1-GE3VISHAY SemiconductorsSOT-23
SI2307CDS-T1-GE3VISHAY SemiconductorsSOT-23
SF1600-TAPVISHAY SemiconductorsSOD-57
SF1600-TAPVISHAY SemiconductorsSOD-57
SI2333CDS-T1-GE3VISHAY SemiconductorsSOT-23
SI2303CDS-T1-GE3VISHAY SemiconductorsSOT-23
SI2304DDS-T1-GE3VISHAY SemiconductorsSOT-23
SI2302CDS-T1-GE3VISHAY SemiconductorsSOT-23
SI2305CDS-T1-GE3VISHAY SemiconductorsSOT-23
SBYV26CVISHAY SemiconductorsDO-41
BZX55C24-TAPVISHAY SemiconductorsDO-35
BYV27-200VISHAY SemiconductorsSOD-57
BYV27-600-TAPVISHAY SemiconductorsSOD-57
BYV27-600-TAPVISHAY SemiconductorsSOD-57
BYV27-200-TAPVISHAY SemiconductorsSOD-57
BYV28-200-TAPVISHAY SemiconductorsSOD-64
SBYV26CVISHAY SemiconductorsDO-41






























China V20PWM45 Vishay Semiconductor TMBS Trench MOS Barrier Schottky Rectifier supplier

V20PWM45 Vishay Semiconductor TMBS Trench MOS Barrier Schottky Rectifier

Inquiry Cart 0