High Purity Single Crystal Sapphire Substrates 200mm

High-purity single crystal sapphire substrate

Product Description

Led sapphire substrate has the characteristics of high sound velocity, high temperature resistance, corrosion resistance, high hardness, high light transmittance, and high melting point (2045°C). It is a very difficult material to process, so it is often used as a photoelectric element s material. At present, the quality of ultra-high-brightness white/blue LEDs depends on the material quality of gallium nitride epitaxy (GaN), and the quality of gallium nitride epitaxy is closely related to the surface processing quality of the sapphire substrate used.

Technical Specification

Precautions

1. The structure matching of the substrate and the epitaxial film: the crystal structure of the epitaxial material and the substrate material are the same or similar, the lattice constant mismatch is small, the crystallization performance is good, and the defect density is low;

2. The matching of the thermal expansion coefficient of the substrate and the epitaxial film: the matching of the thermal expansion coefficient is very important. The large difference in the thermal expansion coefficient of the epitaxial film and the substrate material may not only reduce the quality of the epitaxial film, but also cause heating during device operation. And cause damage to the device;

3. The chemical stability of the substrate and the epitaxial film is matched: the substrate material must have good chemical stability, and it is not easy to decompose and corrode in the temperature and atmosphere of the epitaxial growth, and the quality of the epitaxial film cannot be reduced due to the chemical reaction with the epitaxial film ;

4. The degree of difficulty of material preparation and the level of cost: Taking into account the needs of industrial development, the preparation of substrate materials has simple requirements and the cost should not be high. The size of the substrate is generally not less than 2 inches.

Currently, there are many substrate materials used for GaN-based LEDs, but there are only two substrates that can be used for commercialization, namely sapphire and silicon carbide substrates.

Chongqing Silian Optoelectronics Science & Technology Co., Ltd was founded by China Silian Instrument Group Co., Ltd for the development of LED industry. After the acquisition of Honeywell Sapphire business, the company has become China’s first enterprise with the world’s top-quality large-sized sapphire production and R&D capabilities. The company has the world’s leading high-power sapphire substrates technology. Taking the excellent oppotunity, the company has developed LED packaging, LED lighting applications and other industries in succession to project extension in LED industrial chain. Based on the core-technology of sapphire substrates, we have created an area of 1000 mu (approximately 66.7 hectares) to develop LED industrial china from basic materials to high end products and become the most completed and largest semiconductor energy-efficient in dustrial base in Western China.

Maintaining the enterprise spirit of “People oriented, Natural Selection, Inheriting innovation and Pursuit of Excellence” and the customer tenet of “Silian is guided through customers and stands with customers”, we are committed to provide customers with high-quality sapphire chip substrates, optical window materials, LED packaging devices, and high efficiency LED lighting desplay high end products and creating value for customers.

Silian the international large-sized sapphire substrates standards lauching member.

Acquiring the completed production line from sapphire crystal growth to substrate processing.

We have the qulity advantages of high purity, high consistency and high repeatability.

Cooperating with world top level LED chip manufactures.