Gallium Nitride On Sapphire Semiconductor GaN 100mm

Gallium Nitride on Sapphire Wafers (GaN)

We grow are sapphire wafers using several methods

• Czrochroski (CZ) process is known to be more efficient for c-axis sapphire substrate production.
• Heat Exchanger Method (HEM) - Used to grow sapphire crystal in volume.
• Kyropoulos (KY) - grows high quality sapphire but requires an enormous amount of electricity.
• Edge defined, Film-fed (EFG) - FG technique. A crystal growth process to manufacture more than 10 crystals at one time up to 1.5mm thick per crystal using multi-tip EFG

Sapphire grown using the CZ, HEM or KY methods is used for increasing and expand the production, capacity. EFG are usually used for small volume production.

Sapphire Semiconductor Substrates are available in all Orientations

Orientations include: R-axis; A-axis; C-axis;M-axis.

Sapphire substrates are available in various shapes (circular, rectangle, or square), from a few mm up to 200mm in size, and finishes according to customer specification. Primary flats(as per industry standards) are provided on circular substrates for orientation purposes; secondary flats are available on request. Substrate thickness' range from 0.013" (0.25mm) to 0.025" (0.675mm), depending on your particular application requirements.
We have wafers in stock!

Specs we can provide:

50.8mm 430um SSP and DSP C-M 0.2 Deg

50.8mm 100um SSP and DSP C-plane off to M Plane 0.2 Deg

50.8mm - Other specs and orienations available

100mm 650um SSP

100mm MECH GRADE - LOW PRICE!

Other diameters from but not limited to 10mm x 10mm, 76.2mm, 150mm and 200mm.

Sapphire Wafers for MOCVD growth of Gallium Nitride (GaN) Thin-Films

Clients requests sapphire substrates for to grow MOCVD Growth.

Pls see below for the offer,and see the attached for the manufacturer details and brochures

1. Crystal Materials: 99.995 (or equivalent), High Purity, Monocrystalline Al2O3.
2. Orientation: M-plane (1-100) Patterned Sapphire Substrate (PSS)
3: Diameter: 50.8 mm ± 0.1 mm (2 inch standard diameter).
4. Thickness: 430 μm ± 25 μm (or equivalent).
5. Primary Orientation Flat (OF): A-plane (1 1 -2 0) ± 0.2° (or equivalent).
6. Secondary Orientation Flat: NO
7. Front Surface: Epi-polished, Ra 0.3 nm (by AFM) (or better).
8. Back Surface: Fine-ground, Ra =0.5 - 1.2 um (or equivalent).
9. PSS Shape: Cone
10. PSS Dimension: Height 1.5 um, Diameter 1.2-1.8 um, Pitch 1.2-1.8 um.
11. Packaging: Class 100 clean room and vacuum packaging.
12. Packaging Quantity: 25 pieces per cassette.
13. Product Origin: Taiwan . see attached for the manufacturer details and brochures.
14. M-PSS wafers are to be used for MOCVD growth of gallium nitride (GaN) thin-films.
15. Qty. [50 Unit ]

Pelase contact us for pricing.

Chongqing Silian Optoelectronics Science & Technology Co., Ltd was founded by China Silian Instrument Group Co., Ltd for the development of LED industry. After the acquisition of Honeywell Sapphire business, the company has become China’s first enterprise with the world’s top-quality large-sized sapphire production and R&D capabilities. The company has the world’s leading high-power sapphire substrates technology. Taking the excellent oppotunity, the company has developed LED packaging, LED lighting applications and other industries in succession to project extension in LED industrial chain. Based on the core-technology of sapphire substrates, we have created an area of 1000 mu (approximately 66.7 hectares) to develop LED industrial china from basic materials to high end products and become the most completed and largest semiconductor energy-efficient in dustrial base in Western China.

Maintaining the enterprise spirit of “People oriented, Natural Selection, Inheriting innovation and Pursuit of Excellence” and the customer tenet of “Silian is guided through customers and stands with customers”, we are committed to provide customers with high-quality sapphire chip substrates, optical window materials, LED packaging devices, and high efficiency LED lighting desplay high end products and creating value for customers.

Silian the international large-sized sapphire substrates standards lauching member.

Acquiring the completed production line from sapphire crystal growth to substrate processing.

We have the qulity advantages of high purity, high consistency and high repeatability.

Cooperating with world top level LED chip manufactures.