High Current Mosfet Power Transistor Dual N Type High Performance
Brand Name:OTOMO
Certification:RoHS、SGS
Model Number:HXY4812
Minimum Order Quantity:1000-2000 PCS
Delivery Time:1 - 2 Weeks
Payment Terms:L/C T/T Western Union
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Product Details
HXY4812 0V Dual N-Channel MOSFET
General Description
The HXY4812 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
Product Summary
Absolute Maximum Ratings T =25°C unless otherwise noted
Electrical Characteristics (T =25°C unless otherwise noted)
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
High Current Mosfet Power Transistor Dual N Type High Performance
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