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1 - 20 Results for construction of mosfet from 58 Products

... current of 30A, a maximum gate-source voltage of ±20V, a maximum power dissipation of 1.7W, and a maximum junction temperature of 175°C. It is con...

Time : Dec,09,2024
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..., as we can see in the following figure. Thus the device is also called as the V- or V-FET. The V- the shape of power is cut to penetr...

Time : Dec,09,2024
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..., as we can see in the following figure. Thus the device is also called as the V- or V-FET. The V- the shape of power is cut to penetr...

Time : Dec,09,2024
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... High Performance And Reliability For Switching Product Description: This is designed to handle high power applications such as High F...

Time : Apr,25,2025
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... and IGBT drivers Ic Chip Half-Bridge Gate Driver IC 14-DIP Description The IR2110/IR2113 are high voltage, high speed power and IGBT ...

Time : Dec,09,2024
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... low power Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Appli...

Time : Dec,09,2024
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IP21 Inverter Dc Arc Welder 220V MMA 315 Welding Machine Description MMA welding machines are used to weld metal parts together. They are used ...

Time : Dec,09,2024
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... low power Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Appli...

Time : Dec,09,2024
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...voltage, high speed power and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CM...

Time : Dec,09,2024
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high frequency central portable heater induction Main characteristics: Adopted with , IGBT power device and variable frequency cont...

Time : Dec,09,2024
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..., also known as Metal Oxide Semiconductor Field Effect Transistors () based on Silicon Carbide, are high-power, high-efficiency elect...

Time : Dec,26,2024
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MMDT4401 Dual NPN Small Signal Surface Mount Transistor Features 1.Epitaxial Planar Die Construction 2.Ideal for Low Power Amplification and Switching...

Time : Dec,10,2024
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... with dependent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic cons...

Time : Dec,09,2024
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...voltage, high speed power and IGBT drivers with independent high-side and low-side referenced output channels. Proprietary HVIC and latch im...

Time : Apr,23,2025
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... speed power and IGBT driver with dependent high and low side referenced output channels designed for half bridge applications. Proprietary ...

Time : Dec,09,2024
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.... This exceptional device combines advanced features with robust , offering superior performance and durability in demanding automotive...

Time : Dec,09,2024
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