China Categories
English
1 - 20 Results for fast switching power mosfet from 104115 Products

... • Lead (Pb)-free Available DESCRIPTION Third generation from Vishay provide the designer with the best combination of ...

Time : Dec,09,2024
Contact Now

Add to Cart

... • Lead (Pb)-free Available DESCRIPTION Third generation from Vishay provide the designer with the best combination of ...

Time : Dec,09,2024
Contact Now

Add to Cart

Automotive IGBT Modules VS-FC420SA10 Single Modules SOT-227-4 [MJD Advantage] + 15 years experience for electronic components + Se...

Time : Apr,14,2025
Contact Now

Add to Cart

WSF3012 N-Ch and P-Channel MOSFET Description The WSF3012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , whic...

Time : Dec,09,2024
Contact Now

Add to Cart

...FEATURES • • Low ON Resistance • Low Gate Charge • 100% Single Pulse avalanche energy Test APPLICATIONS • circuit of ad...

Time : Apr,07,2025
Contact Now

Add to Cart

... = 10V Vgs(th) (Max): 2.3V @Id = 250μA Package: TO-220FP Features: Low gate charge, low on-resistance, and Why buy from us >>> ...

Time : Dec,09,2024
Contact Now

Add to Cart

... DESCRIPTION The D7N65 is a high voltage and is designed to have better characteristics, such as time, low ...

Time : Dec,09,2024
Contact Now

Add to Cart

... Avalanche Rated Lead-Free Description Advanced HEXFET® from International Rectifier utilize advanced processing techniques to achiev...

Time : Dec,09,2024
Contact Now

Add to Cart

... RDS(ON) and low gate charge. The complementary may be used in H-bridge, Inverters and other applications. FEATURES ● Low Input Capacitance...

Time : Mar,29,2025
Contact Now

Add to Cart

...extremely low on-resistance per silicon area. This benefit, combined with the speed and ruggedized device design that HEXFET® Power ...

Time : Dec,09,2024
Contact Now

Add to Cart

..., especially as . Variant s include planar , VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transis...

Time : Dec,09,2024
Contact Now

Add to Cart

... is a discrete device for LED Driver, PFC Circuit, Supply, UPS Of Continuous Supply System, and New Energy ...

Time : Dec,26,2024
Contact Now

Add to Cart

High NVHL095N65S3HF SUPERFET III , 650V, 95mΩ, 36A FRFET recovery [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is foc...

Time : Dec,09,2024
Contact Now

Add to Cart

Electronic components STPS15L30C-TR STS1DNC45 STV6419AG advantage price for original stock Feature • Enhancement mode transistor – Normally OFF...

Time : Dec,09,2024
Contact Now

Add to Cart

... 12A / 200V P-Channel Original FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • P-Channel • Isolated Central Mounting Hol...

Time : Dec,09,2024
Contact Now

Add to Cart

... 800V 27A 0.32 Rds HiPerFET Description HiPerFETTM Q-CLASS Single Die N-Channel Enhancement Mode Avalanche...

Time : Dec,09,2024
Contact Now

Add to Cart

... and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliabl...

Time : Mar,18,2025
Contact Now

Add to Cart

... DC IGBT supply rectifier supply unit (also known as rectifier SMR) operates at high frequency through or IGBT. ...

Time : Dec,09,2024
Contact Now

Add to Cart

... Description: N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Applications: International standard packages Molding ep...

Time : Dec,09,2024
Contact Now

Add to Cart

... two N-channel or IGBTs in a half-bridge configuration. Its rise and fall time (15ns typical) and wide input voltage range (4.5V to 18...

Time : Dec,09,2024
Contact Now

Add to Cart

Inquiry Cart 0