... Power Electronics 8-PowerTDFN Voltage N-Channel Power s FET Type N-Channel Technology (Metal Oxide) Drain to Source Voltage (Vd...
Add to Cart
.... The complementary may be used in H-bridge, Inverters and other applications. FEATURES Device VBR(DSS) RDS(ON) MAX TJ=25ºC Package N-Chann...
Add to Cart
... 60 V, 115 mA, N−Channel SOT−23 Features • Pb−Free Packages are Available V(BR)DSS RDS(on) MAX MAX 60 V 7.5 @ 10 V, 500 mA 115 mA MAXIMUM ...
Add to Cart
... Description The 6G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary s may be us...
Add to Cart
... TYP MAX Typ Typ LC65R600F TO-220F 1 N 7 650 30 2 4 550 640 Product Description: One of the key features of this is its 100% avalanche tes...
Add to Cart
... N-Channel Technology (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain () @ 25°C 21A (Tc) Drive Voltage (Max R...
Add to Cart
... Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ , Vgs 2.4 mOhm @ 55A, 10V Vgs(th) (Max) @ 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 380nC @...
Add to Cart
... Voltage 30 V VGS Gate-to-Source Voltage ± 20 @ TC = 25°C Continuous Drain Current, VGS @ 10V 161f A @ TC = 100°C Continuous Drain Current, V...
Add to Cart
...: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 20 V - Continuous Drain Current: 5.8 A Rds On - Drain-Source Res...
Add to Cart
..., Chassis Mount. Specification Of DF23MR12W1M1B11BPSA1 Part Number DF23MR12W1M1B11BPSA1 Drain to Source Voltage (Vdss) 1200V (1.2kV) Current - Con...
Add to Cart
... FEATURES 1. VDS = 50V, = 0.22A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating:HBM 2300V 2. High power and current handing capabil...
Add to Cart
... COSS to Simplify Design,(See AN 1001) Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Parameter Max. Unit @ TC = 25°...
Add to Cart
... (Metal Oxide) Drain to Source Voltage (Vdss) 1500 V Current - Continuous Drain () @ 25°C 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1...
Add to Cart
.... The complementary may be used in H-bridge, Inverters and other applications. FEATURES Device VBR(DSS) RDS(ON) MAX TJ=25ºC Package N-Chann...
Add to Cart
...23-6L Plastic-Encapsulate Dual N-Channel General Description VDSS= V = 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS ...
Add to Cart
... VISHAY SUD50N024-06P 50N024 TO-252 FEATURES TrenchFET Power 175C Junction Temperature PWM Optimized for High Efficiency APPLICATIONS ...
Add to Cart
IRLML2244TRPBF Chips Diode Transistor Integrated Circuits PRODUCT DESCRIPTION P-CH 20V 4.3A SOT23 PRODUCT PROPERTIES Mfr Infineon Techno...
Add to Cart
... Array 100V 4.5A 2.5W Surface Mount 8-SOIC Datasheet:FDS3992 Category FET, Arrays Mfr onsemi Series PowerTrench Product Status Active ...
Add to Cart
... and other applications. Features: Device VBR(DSS) RDS(ON) MAX TJ=25ºC Package N-Channel 40V <30mΩ@VGS=10V,=12A TO252-4L <40mΩ@VGS=4.5V,=8A P-Channel -40V <45mΩ@VGS=-10V,=-12A <66mΩ@VGS=-4...
Add to Cart
... DESCRIPTION The D7N65 is a high voltage power and is designed to have better characteristics, such as fast switching time, low gate c...
Add to Cart