STK681-310 Onsemi Motor Driver Power MOSFET Electronic components - Motor Driver Power MOSFET, Parallel - Specification : Category Inte...
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FGH75T65SHD-F155 IC Electronic Components 75A field cut off groove Product description rated over a −40°C to +105°C temperature Part number FGH75T65SH...
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IXGR40N60C2D1 HiPerFASTTM ISOPLUS247TM C2-Class High Speed s Type PT Voltage - Collector Emitter Breakdown (Max) 600V Current - Collecto...
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... Trench- 4. Specification Of FZ1600R12HP4 Series IHM-B Type Trench Configuration Single Switch Voltage - Collector Emitter Breakdown (Max)...
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... Modules M57962AL-01R-02 Hybrid For Driving Modules Description: M57962AL is a hybrid integrated circuit designed for driving n-channel...
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...203G MODULE S-SERIES AC SWITCH Module Manufacturer: Mitsubishi Electric Product Category: Modules RoHS: Details Brand: Mitsubishi El...
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Power Module 1700V 310A FF200R17KE3 Half Bridge FF200R12KT3 FF200R12KT4 Type Trench Field Stop Configuration Half Bridge Voltage - Collector...
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... Chip Silkscreen K30H603 Transistors IKW30N60H3 K30H603 silk screen new imported triode high power welding tube Transistors 600V ...
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... input impedance [1] 7 built into 1 package. [1] Enhancement-mode [1] High speed type : Inverter stage : VCE (sat) = 2.8V (max) (@ = 1...
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... (Icm) 27A Vce(on) (Max) @ Vge, 2.35V @ 15V, 9A Power - Max 180W Switching Energy 530µJ (on), 380µJ (off) Input Type Standard Gate Charge ......
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... Chip Package Type: STRPBF Description: The IR2104STRPBF is a high-voltage, high-speed power MOSFET and driver with independent high and low...
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... Module Half Bridge 1200V 420A 1550W Chassis Mount Module BSM200GB120DLC Module BSM200GB120DLC Product Name High Quality Module Half Bridg...
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STGIPN3H60 IGBT Modules Chips Integrated Circuits IC IGBT Bridge PRODUCT DESCRIPTION Part number # STGIPN3H60 is manufactured by ST Technologies and d...
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IR2110PBF power MOSFET and drivers Chip Half-Bridge Gate Driver 14-DIP Description The IR2110/IR2113 are high voltage, high speed power MOS...
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... Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 650 V Current - Collector () (Max) 80 A Current - Collector Pulsed (m)...
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JY21L High and Low side driver General Description The product is a high voltage, high speed power MOSFET and IGBT driver based on P-SUB P-EPI process...
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PRODUCT DESCRIPTION Logic ICs IGBT Power Module NVIDIA G84-600-A2 For Computer IGBT Power Module NVIDIA G84-600-A2 Manufacturer: NVIDIA Model: G84-600...
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... V, inverter dual modules FF200R12KT4 power drive module Maximum Rated Values Collector-emitter voltage Tvj = 25°C VCES 1200 V Continuous DC c...
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FS300R17OE4B81BPSA1 SP002753992 Infineon IC IGBT Module MEDIUM POWER ECONO FS300R17OE4_B81 Manufacturer: Infineon Product Type: IGBT Modules Configura...
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... Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (...
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