infineon power mosfet

... Trans N-CH Si 75V 350A 3-Pin(3+Tab) TO-247AC Tube Product Technical Specifications EU RoHS Compliant with Exemption ECCN (US) EAR9...

IPD530N15N3GATMA1 Electronics Product Description: The IPD530N15N3GATMA1 is a high-performance , designed t...

... Semiconductor Products N-Channel 55 V 30A (Tc) 120W (Tc) Surface Mount D-Pak Description This HEXFET® utilizes the latest processing ...

..., high -density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit)....

... IRF1405STRLPBF Typical Applications Stripe Planar design of HEXFET® utilizes the lastest processing techniques to ac...

Product Range IPB017N10N5 Field Effect Transistor Semiconductors Transistors N-channel 600 V, 0.175 Ohm typ 18 A MDmesh D...

INFINEON Chip IRF540NPBF MOSFET N-CH 100V 33A TO220AB Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Thr...

... Heat Dissipation Metal Oxide Product Description: The is a type N device and has a gate-source voltage (Vgs) of ±30V, ma...

... 10A 55V 200W Field - effect tube inverter high - tube Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt R...

... Product Description: High is a type of with high efficiency, which is widely used in applications such as Solar Inverter...

... Circuits 3.0 A, 60 V, Logic Level, N−Channel SOT−223 Designed for low voltage, high speed switching applications in supplies, c...

... 4A 650V Applications In Switching Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L DESCRIPTION The F4N65L is a h...

Product Detail Manufacturer Infineon Technologies Series CoolMOS™ Packaging Tube Part Status Not For New Designs FET Type N-Channel Technology MOSFET ...

IXFK27N80Q N Channel 800V 27A 0.32 Rds HiPerFET Description HiPerFETTM Q-CLASS Single Die N-Channel Enhancem...

... 55V 49A 94W Through Hole TO-220 Description Advanced HEXFET® from International Rectifier utilize advanced processing te...

... N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 in a TO-220 package General Description : This device is an N-channel ...

...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This is usually used at high speed switchin...

IR21094STRPBF high voltage, high speed and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed and IGBT d...

...HEXFET® Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Para...

... TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Stat...