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1 - 20 Results for mosfet design from 1427 Products

... for use in switching applications. It features an advanced trench technology and a high-cell density cell to provide improved RDS(ON). The ...

Time : Dec,09,2024
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... Transistor , Small Power Switch Enhancement Mode N Channel Transistor DESCRIPTION The UTC 12N60-C is a high voltage power MOSF...

Time : Dec,09,2024
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... properties such as high thermal conductivity, high breakdown voltage, and low switching losses. The use of silicon carbide material in the MOSFET ...

Time : Apr,07,2025
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... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power is usually used in h...

Time : Dec,09,2024
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MJD122G Complementary Darlington Power Transistor switching power low power Designed for general purpose amplifier and low speed switchi...

Time : Dec,09,2024
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... Power Transistor Description Fifth Generation HEXFET® Power s from International Rectifier utilize advanced processing techniques to ...

Time : Dec,09,2024
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.... This type of is a N type, which makes it suitable for a range of applications that require high voltage and/or ultra-high voltage power su...

Time : Mar,21,2025
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... 55V 110A 200W Through Hole TO-220AB Description Advanced HEXFET® Power s from International Rectifier utilize advanced processing tech...

Time : Dec,09,2024
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... Manufacturer: TT Electronics Product Category: TT Electronics Brand: Semelab / TT Electronics The D2085UK is a push-pull RF power transistor...

Time : Apr,14,2025
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.... It belongs to the HEXFET® series and is suitable for use as a single FET in circuit . With a drain-to-source voltage (Vdss) rating of 200V...

Time : Dec,09,2024
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... POWER THRU-HOLE (TO-254AA) Product Summary Part Number RDS(on) ID IRFM250 0.100 Ω 27.4A IRFM250 JANTX2N7225 JANTXV2N7225 REF:MIL-PRF-...

Time : Dec,09,2024
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..., tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power are desi...

Time : Dec,09,2024
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...Circuit Chip SCTWA60N120G2-4 Silicon carbide Power Transistors Product Description Of SCTWA60N120G2-4 SCTWA60N120G2-4 N-Channel Power ...

Time : Apr,14,2025
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... Welding Machine 60Hz For SS Welding Inverter DC Troditional TIG Welding Machine With Very Stable Quality Suit For S.S Welding Inverte...

Time : Dec,09,2024
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... 7A 650V Applications In Switching Power Supplies And Adaptors 7A, 650V N-CHANNEL TO-220F-3L POWER DESCRIPTION The F7N65 is a high vol...

Time : Dec,09,2024
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...on‐resistance with low gate charge. These features combine to make this an extremely efficient and reliable device for use in high current l...

Time : Mar,29,2025
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Mosfet Power Transistor DMHT3006LFJ-13 V-DFN5045-12 Mosfet BVDSS: 25V-30V Description This MOSFET is designed to minimize the on-state resistance (RDS...

Time : Dec,09,2024
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SOT-23 Plastic-Encapsulate BSS138 N-Channel 50-V(D-S) V(BR)DSS RDS(on)MAX ID 50 V 3.5Ω@10V 220mA 6Ω@4.5V BSS138 SOT-23 Datasheet.pdf FE...

Time : Dec,09,2024
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... have been to minimize on-state resistance while provide rugged, reliable, and fast switching performance. Its maximum power dissip...

Time : Dec,09,2024
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Product Detail Packaging Tube Part Status Not For New Designs FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Cu...

Time : Dec,09,2024
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