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1 - 20 Results for mosfet power dissipation from 21659 Products

... Electronics High Quality Low Excellent Switching Performance Product Features: • Low on-resistance • High peak curre...

Time : Dec,09,2024
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... Heat Metal Oxide Product Description: The is a type N device and has a gate-source voltage (Vgs) of ±30V, ma...

Time : Apr,07,2025
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... • Superior commutation ruggedness • Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) Benefits • Improves sys...

Time : Dec,09,2024
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... 200V 65A N CHANNEL TRANSISTOR TO-247AC IRFP4227PBF Features Advanced Process Technology Key Parameters Optimized for PDP Sustain, Energy Re...

Time : Dec,09,2024
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..., a high voltage FET designed to handle high voltages while still providing low leakage and great heat . This provides the ...

Time : Dec,26,2024
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... Transistor Module Silicon NPN Epitaxial Type (Four Darlington Transistors in One) MP4104 High Switching Applications Hammer Drive...

Time : Dec,09,2024
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... Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PC Collector 0.5 W TJ Junction Temperature 150 ℃...

Time : Dec,10,2024
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... (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 49A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V ...

Time : Dec,09,2024
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...similar to the general . The are very special to handle the high level of . It shows the high switching speed and by comp...

Time : Dec,09,2024
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...similar to the general . The are very special to handle the high level of . It shows the high switching speed and by comp...

Time : Dec,09,2024
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... Module​ Product Description Of MSC40SM120JCU3 MSC40SM120JCU3 is a 1200 V, 55 A full Silicon Carbide Buck Chopper SiC Modu...

Time : Dec,09,2024
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... TRANSISTOR IRFB38N20DPBF N- CHANNEL SMPS FET Type: N-Channel Drain To Source Voltage: 200V Current - Continuous Drain: 43A Driv...

Time : Dec,09,2024
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... Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme...

Time : Dec,09,2024
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... 40 V Drain-Gate Voltage VDG 40 V Gate Current IG 10 mAdc (1) TA = +25℃ PT 0.36 W Operating Junction Tj -65 to +175 ℃ Operating S...

Time : Dec,09,2024
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High Power MOSFET NTMFD1D4N02P1E MOSFET, Power, 25V Dual N-Channel Power Clip [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-c...

Time : Dec,09,2024
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Transistor IXFH160N15T2 160A 150V 880W N-Channel TrenchT2 Description DC charging stations are designed to convert the electrical grid’s ...

Time : Dec,09,2024
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...Zener Voltage Tolerance: ± 2%​ Maximum Ratings and Characteristics ( Ta=25℃ unless otherwise specified) Parameter Symbol Value Unit Power Dissipati...

Time : Dec,09,2024
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...​ PRODUCT FEATURES 1. Up to 1.25Gb/s data links 2. FP laser transmitter for TS-SF-BL3512-20 DFB laser transmitter for TS-SF-BL5312...

Time : Apr,08,2025
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... and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliabl...

Time : Dec,09,2024
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... IC Chip, which is a 650V, 30A N, is an excellent choice for applications that require excellent performance even in extreme conditions...

Time : Dec,09,2024
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