...Ω. 3. It provides low input and gate capacitance, making it suitable for high-frequency applications. 4. It offers low gate charge and fa...
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... Power Transistor for high speed application Description The 2SC5589 is a high voltage, high efficiency, simple to , 4A buck reg...
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General Description: The JY11M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with hi...
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... Power Transistor For Load Power Management Power Transistor DESCRIPTION The 50P03NF advanced trench technology to provide...
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...ideal for in battery-powered devices that require low power consumption. This also offers high speeds and low gate charge, mak...
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... density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and...
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...Load • Battery protection • Power management Features • 0.9 A, 20 V RDS(ON) = 220 mΩ @ VGS = 4.5 V RDS(ON) = 300 mΩ @ VGS = 2.5 V • Low gate...
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... 7A 650V Applications In Power Supplies And Adaptors 7A, 650V N-CHANNEL TO-220F-3L POWER DESCRIPTION The F7N65 is a high vol...
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...) is a high power, low on resistance, high frequency device with excellent performance. It is widely in Solar Inverter, High-v...
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... as fast time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power is usually in h...
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... transistor. With a superior voltage tolerance of up to 600 volts and a maximum current capacity of 80 amps, this N-channel power is ...
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... 60V 190mA Single SMD/SMT Products Description: The NX7002AK is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mount...
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...% avalanche tested. Zener-protected. Absolute Maximum Ratings : applications. Tailored for very high frequency converters (f > 150 kHz). ...
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... transistor. The following are its applications, conclusions, and parameters: Application: as a high-voltage and high-power load ...
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... General Description This 20V N-Channel uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management ...
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... 55V 110A 200W Through Hole TO-220AB Description Advanced HEXFET® Power s from International Rectifier utilize advanced processing tech...
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... epitaxial process, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for , compared to its predecessor, DTMOSIII. This red...
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... and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliabl...
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...designed for gate control of N-channel, enhancement-mode, power as high-side or low-side . The MIC5016/7 can sustain an on-sta...
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SOT-23 Plastic-Encapsulate MOSFETS BC2301 P-Channel 20-V(D-S) MOSFET BC2301 SOT-23 Datasheet.pdf FEATURES TrenchFET Power MOSFET MARKING: 2301 APPLICA...
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