n channel power mosfet

... 7A 650V Applications In Switching Supplies And Adaptors 7A, 650V N- TO-220F-3L DESCRIPTION The F7N65...

... This advanced is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avala...

High ATP113 P-, -60V, -35A, 29.5mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors ...

NTMFS5C404NLT1G Electronics 8-PowerTDFN Voltage N- FET Type N- Technology (Metal Oxide) Drain to Sourc...

... 55V 49A 94W Through Hole TO-220 Description Advanced HEXFET® from International Rectifier utilize advanced proce...

... This advanced is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avala...

...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This is usually used at high speed switchin...

... Contact Us High Light: STP45N10F7 Integrated IC Chip , N , 100V N STP45N10F7 N- 100 V 0 ...

... Single P-CH 20V 9A 8WDFN P- Products Description: 1. -20V,-15A,6.7 Mω, P- 2. P- 20V 9A (Ta) 840mW (Ta) Su...

... is brand new and unused, ensuring reliable and consistent performance. Designed and tested to meet strict quality standards, this is ...

... MSC750SMA170S Integrated Circuit Chip TO-268-3​ Product Description Of MSC750SMA170S MSC750SMA170S is a 1700 V, 750 mΩ Silicon...

... charge for faster and more efficient switching. Features : 100% avalanche tested Ultra low on-resistance Distinctive Characteristics : Part No: ST...

IR21094STRPBF high voltage, high speed and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed and IGBT d...

... in a TO-220 package About IRF1404PBF: Summary of Features IRF1404 40V Single N- in a TO-220 package Planar...

IRFP260MPBF N - 200V 50A Through Hole Metal Oxide TO247-3 FEATURES Type : -Single Packaging :Tube Part state: ACTIVE FET t...

Ultra Small Package Superjunction Power MOSFET with Large EMI Margin *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {hei...

... Technology (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 72A (Tc) Drive Voltage (Max Rds ...

... may be used in H-bridge, Inverters and other applications. FEATURES Device VBR(DSS) RDS(ON) MAX TJ=25ºC Package N- 40V <30mΩ@VGS=10V,ID=12A TO252-4L <40mΩ@VGS=4.5V,ID=8A P- -40V <45mΩ@VGS=-10V,ID=...

Quick Detail: High Speed, Dual Channel Power MOSFET Drivers Specifications: Datasheets ISL89410-12 Product Photos 8-SOIC Standard Package 97 Category ...

Infineon MOSFET N-Ch 650V 20.7A TO247-3 CoolMOS C3,600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ Replacement for 600V CoolMOS™ C3 is CoolMOS...