n channel transistor

... MOSFET N- 150V 104A TO220AB TIP120 Product Paramenters Manufacturer: Standard Packaging: Tube Product Category: MOSFE...

J201 JFET N- General Purpose high power rf Manufacturer: Fairchild Product Category: JFET RoHS: Details Technology: Si M...

...is device is suitable for use as a load switch or in PWM applications P GENERAL FEATURES V DS =- 60V,I D =-50A R DS(ON) < 25mΩ @...

... TW015N65C,S1F Integrated Circuit Chip TO-247-3 ​ Product Description Of TW015N65C,S1F TW015N65C,S1F is N- 650...

... automation equipment must produce more than 200 products in one minute. This speed must be achieved, or it cannot meet the requirements. Transisto...

NTMD4840NR2G MOSFET NFET SO8 30V N - MOSFET – Power, Dual, N-, SOIC-8 30 V, 7.5 A FEATURES • Low RDS(on) to Minimize Conduct...

... 6. 100% RG (gate resistance) tested Technological Parameters: Voltage Rating (DC) 30.0 V Current Rating 21.0 A Number of 1...

... Hole TO-220AB Specification: Category Discrete Semiconductor Products 　 - FETs, MOSFETs - Single Mfr Infineon Technologies Series HEXF...

... BSS123LT1G SOT23 Enhanced FET MOSFET 100V 170mA N- Manufacturer: onsemi Product Category: MOSFET RoHS: Details Technology...

...-E3 power mosfets N operates in enhancement mode Vishay's SIHF10N40D-E3 maximum power dissipation is 33000 mW. This N MO...

MRF151G RF Power Field-Effect 500W, 50V, 175MHz N- Broadband MOSFET replacement for BLF278 Features 1, Guaranteed Performance at 175...

NTK3134NT5G MOSFET Power Electronics SOT-723 High Power N- Applications FET Type N- Technology MOSFET (Metal Oxide) Drain to ...

Product Detail Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Cont...

IRFR7440TRPBF IC Electronic Components N channel transistor tube Product description rated over a −40°C to +105°C temperature Part number IRFR7440TRPB...

The EVQPAE07K,from Panasonics,is semiconductors-Integrated Circuits - ICs.what we offer have competitive price in the global market,which are in origi...

... SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N- Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: ...

... high-performance and efficiency in power management applications. This versatile is perfect for a wide range of applications, including...

FDA59N30 Pnp Power Transistor 59A 300V N-Channel 56 MOhms High Power Transistor Description These N-Channel enhancement mode power field effect transi...

... Mos Field Effect ,High Power -30V/-80A N Mos Field Effect Description -30V/-80A R DS(ON) = 3.8 mΩ ...

... • Logic level compatible ID = -0.3 A • Subminiature surface mount package RDS(ON) ≤ 2.5 Ω (VGS = -10 V) GENERAL DESCRIPTION PINNING SOT23 P-channe...