p channel de mosfet

... Polarity: N-, P- Number of s: 2 Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 600 mA, 500...

... 20V POWER 2.3W 41W Surface Mount 8-MLP General Description This P- is produced using Fairchild Semiconductor’s advance...

NTMFS5C404NLT1G Power Electronics 8-PowerTDFN Voltage N- Power s FET Type N- Technology (Metal Oxide) Drain to Sourc...

High Power MOSFET FDMQ8203 Dual N-Channel and Dual P-Channel PowerTrench® MOSFET [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on sem...

... Typ Typ CS10N65A2 TO-220F N 10 650 ±30 2 4 820 950 Product Description: With its low ON resistance, the CS minimizes power loss and maximiz...

SI4435DY 30V P- PowerTrench General Description This P- is a rugged gate version of Fairchild Semiconductor’s advanced Pow...

... POWER 7A 650V Applications In Switching Power Supplies And Adaptors 7A, 650V N- TO-220F-3L POWER DESCRIPTION The F7N65...

... RDS(ON) and low gate charge. The complementary may be used in H-bridge, Inverters and other applications. FEATURES ● Low Input Capacitance...

...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power is usually used at high speed switchin...

... Single P-CH 20V 9A 8WDFN P- Products Description: 1. -20V,-15A,6.7 Mω, P- power 2. P- 20V 9A (Ta) 840mW (Ta) Su...

... Contact Us High Light: STP45N10F7 Integrated IC Chip , N Power , 100V N Power STP45N10F7 N- 100 V 0 ...

... 40V BUK7K6R2-40EX Dual N- 40V LFPAK-33-8 SMD/SMT 5.8 mOhms- 20 V, + 20 V Manufacturer: Nexperia Product Categor...

... Power MSC750SMA170S Integrated Circuit Chip TO-268-3​ Product Description Of MSC750SMA170S MSC750SMA170S is a 1700 V, 750 mΩ Silicon...

... may be used in H-bridge, Inverters and other applications. FEATURES Device VBR(DSS) RDS(ON) MAX TJ=25ºC Package N- 40V <30mΩ@VGS=10V,ID=12A TO252-4L <40mΩ@VGS=4.5V,ID=8A P- -40V <45mΩ@VGS=-10V,ID=...

Product Detail Manufacturer Infineon Technologies Series CoolMOS™ Packaging Tube Part Status Not For New Designs FET Type N-Channel Technology MOSFET ...

..., tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power are desi...

... charge for faster and more efficient switching. Features : 100% avalanche tested Ultra low on-resistance Distinctive Characteristics : Part No: ST...

IRFP260MPBF N - Power 200V 50A Through Hole Metal Oxide TO247-3 FEATURES Type : -Single Packaging :Tube Part state: ACTIVE FET t...

... possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFE...

Quick Detail: 30 Volt P-Channel PowerTrench MOSFET Description: Advanced P Channel MOSFET combined with Advanced SO8 FLMP package providing a device w...