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1 - 20 Results for p channel mosfet sot 23 from 562 Products

... T ♦Ultra Low On-Resistance ♦P- Footprint ♦Low Profile (<1.1mm) ♦Available in Tape and Reel ♦Fast Switching These P- from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power ......

Time : Dec,09,2024
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... T ♦Ultra Low On-Resistance ♦P- Footprint ♦Low Profile (<1.1mm) ♦Available in Tape and Reel ♦Fast Switching These P- from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power ......

Time : Dec,09,2024
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BSS306NH6327XTSA1 MOSFET Power Electronics OptiMOS™2 Small-Signal-Transistor N-Channel Package SOT-23 FET Type N-Channel Technology MOSFET (Metal Oxid...

Time : Dec,09,2024
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NTR1P02LT1G -20V -1.3A P- Manufacturer: onsemi Product Category: RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / C...

Time : May,03,2025
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SOT-23 Plastic-Encapsulate MOSFETS BC2301 P-Channel 20-V(D-S) MOSFET BC2301 SOT-23 Datasheet.pdf FEATURES TrenchFET Power MOSFET MARKING: 2301 APPLICA...

Time : Dec,09,2024
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... 60 V (D-S) 175 °C FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power • AEC-Q101 Qualifi...

Time : Dec,09,2024
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8205A -6L Plastic-Encapsulate Dual N- General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V ...

Time : Dec,09,2024
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8205A -6L Plastic-Encapsulate Dual N- General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V ...

Time : Dec,09,2024
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High Power BSS123L Power 170 mA, 100 V, N- [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conducto...

Time : Dec,09,2024
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N-Ch 100V 190mA -3 Product Attribute Attribute Value Select Attribute Manufacturer: Infineon Product Category: RoHS: Details Techn...

Time : Dec,09,2024
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... N-CH 20V 6.3A 3-Pin T/R IRLML6244TRPBF Integrated Circuits Typical Output Characteristics : Technical Specifications : PCB changed 3 ...

Time : Dec,09,2024
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Integrated Circuits IC Original and New,CJ2301 SOT-23 P-Channel MOSFET 2.3A20V CJ Changjing Original [Who we are?] Shenzhen QINGFENGYUAN Technology Co...

Time : Dec,10,2024
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... performance, making it ideal for high efficiency power management applications. PRODUCT PROPERTIES Product Status Active FET Type N- Techno...

Time : Dec,13,2024
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Infineon Technologies BSS138NH6327 N Channel SOT-23 MOSFET Discrete Semiconductor Products include electronic components that perform a single functio...

Time : Dec,09,2024
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2N7002-7-F N- 60 V 115mA (Ta) 370mW (Ta) Surface Mount -3 Description This has been designed to minimize the on-state resistance (...

Time : Dec,09,2024
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... with an external N- as an ideal diode rectifier for low loss reverse polarity protection with a 20-mV forward voltage drop. The wide...

Time : Dec,09,2024
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Product Detail Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Curren...

Time : Dec,09,2024
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... in a -227 package. Specification Of MSC017SMA120J Part Number MSC017SMA120J Vds - Drain-Source Breakdown Voltage: 1.2 kV Id - Continuous Drain ...

Time : Dec,09,2024
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