p channel mosfet switch

IRF530NPBF Power Electronics High Power N Applications FET Type N- Technology (Metal Oxide) Drain to Sou...

... 2N60 TO-220F Logic Level Transistor DESCRIPTION The UTC 2N60-TC3 is a high voltage power and is designed to have bette...

...IGBT driver based on P-SUB P-EPI process. The floating driver can be used to drive two N- power or IGBT independently which o...

... T ♦Ultra Low On-Resistance ♦P- ♦SOT-23 Footprint ♦Low Profile (<1.1mm) ♦Available in Tape and Reel ♦Fast These P- from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast speed and ruggedized device design that HEXFET® power ......

... MAX Typ Typ CS8N65A2 TO-220F N 8 650 ±30 2 4 1040 1500 24 1107 Product Description: One of the key highlights of this is its low ON resista...

... N-CH 30V 195A POWERFLAT N P Manufacturer: STMicroelectronics Product Category: RoHS: Details Technology: Si Mounting ...

... TRANSISTOR TO-247AC IRFP4227PBF Features Advanced Process Technology Key Parameters Optimized for PDP Sustain, Energy Recovery and P...

...le retaining a 12V VGS(MAX) rating. This device is suitable for use as a unidirectional or bi-directional load . Product Summary Absolute Max...

... 800V 27A 0.32 Rds Power HiPerFET Description HiPerFETTM Power Q-CLASS Single Die N- Enhancement Mode A...

... T ♦Ultra Low On-Resistance ♦P- ♦SOT-23 Footprint ♦Low Profile (<1.1mm) ♦Available in Tape and Reel ♦Fast These P- from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast speed and ruggedized device design that HEXFET® power ......

... P- 30V 34A 8SOP Optimize Your Notebook Battery Power and Load with Top Quality DMP34M4SPS-13 If you're looking to boost the...

... 200V 18A Power Transistor Description Fifth Generation HEXFET® Power s from International Rectifier utilize advance...

... RoHS: N Technology: Si Mounting Style: Through Hole Package / Case: TO-220-7 Transistor Polarity: N- Number of s: 1 Vds - Dr...

... low onresistance per silicon area. This benefit, combined with the fast speed and ruggedized device design that power are well k...

... transistor. The following are its applications, conclusions, and parameters: Application: Used as a high-voltage and high-power load...

... TRANSISTOR 200V SURFACE MOUNT D2PAK Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: Moun...

... is a type of power , which is designed for high voltage applications. It is characterized by its embedded FRD high voltage tech...

... Plastic-Encapsulate DESCRIPTION The CJ2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge an...

... N- Transistor; 191 A; 30 V; 8-Pin SO-8FL 3. Trans N-CH 30V 28A 8-Pin SO-FL T/R Technological Parameters: Polarity N - ...

.... Fast . Fully Avalanche Rated. Lead-Free. Absolute Maximum Ratings : Description : Advanced HEXFET® Power from International Rect...