... 200V SURFACE MOUNT D2PAK Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: Moun...
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... , Small Power Switch Enhancement Mode N DESCRIPTION The UTC 12N60-C is a high voltage po...
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NTR4003NT1G Power Electronics N- TO-236-3 Solution Switching Amplification Applications FET Type N- Technology ...
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...Rated Ease of Paralleling Simple Drive Requirements Description Fifth Generation HEXFET® Power from International Rectifier utilize advance...
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FDMS6681Z P-CH 30V 21.1A/49A 8PQFN Original Products Description: 1. FAIRCHILD SEMICONDUCTOR FDMS6681Z , P-...
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...-8(Surface Mount). Specification Of IPBE65R115CFD7A Part Number IPBE65R115CFD7A FET Type N- Technology (Metal Oxide) Drain to Source ...
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IXFK27N80Q N 800V 27A 0.32 Rds Power HiPerFET Description HiPerFETTM Power Q-CLASS Single Die N- Enhancem...
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High-performance N- FQPF10N65C - The Ultimate for All Your Power Needs Introducing the FQPF10N65C, a powerful N- th...
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Product Detail Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Cur...
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... 200V 18A Switching Power Description Fifth Generation HEXFET® Power s from International Rectifier utilize advance...
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ISO9001.pdf Application: IPD80R1K4P7 is an N-channel MOSFET transistor commonly used in high-efficiency DC-DC converters and power supply applications...
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... 200V 18A Switching Power Description Fifth Generation HEXFET® Power s from International Rectifier utilize advance...
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Product Description: High Voltage MOSFET is a type of power mosfet, which is designed for high voltage applications. It is characterized by its embedd...
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IRF3205PBF Trans MOSFET N-CH Si 55V 110A 3-Pin(3+Tab) TO-220AB Tube Basic Parameters : Advanced Process Technology. Ultra Low On-Resistance. Dynamic d...
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D2003UK N/A Electronic Components IC MCU Microcontroller Integrated Circuits D2003UK #detail_decorate_root .magic-0{border-bottom-style:solid;border-b...
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D1028UK RF MOSFET Transistors RF MOSFET N-CH 70V 30A 5-Pin Case DR anufacturer: TT Electronics Product Category: RF MOSFET Transistors Transistor Pola...
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SI2301CDS - T1 - E3 high power P - 20-V (D-S) P- 20-V (D-S) FEATURES • Halogen-free Option Available •...
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... Polarity: N- Number of s: 1 Vds - Drain-Source Breakdown Voltage: 600 V Id - Continuous Drain Current: 36 A Rds On - Drain-S...
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... Field Effect Discrete N- N- 600 V, 0.13 Ω typ., 21 A MDmesh™ DM2 Power in D²PAK, TO-220 and TO-...
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