... waveguides is demonstrated. Through flip-chip bonding of GaInNAs/GaAs laser directly onto the silicon substrate, efficient heat dissipation...
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... High Power Infrared Emitting FEATURES • Package type: leaded • Package form: T-1 • Dimensions (in mm): ∅ 3 • Peak wavelength: λp = 940 ...
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... of half intensity: ϕ = ± 25° • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si • P...
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RS-422 Output Mode High Fiber Optic Gyroscope with Zero Bias Stability ≤0.1°/h and Long Service Life
...: A low-loss, highly birefringent, bias-preserving fiber is used, precisely wound into a ring structure to enhance the Sagnac effect. Photodetector...
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... compound, which is key raw material for laser of indium phosphide substrate(LD), light emitting (LED), in optical communi...
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... isolation between input and output circuits. This device contains a GaAs infrared light emitting (LED) and a in a single packa...
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... and sensors that are embedded in a bezel around the display and emit and detect rows and columns of infrared light across the face of the di...
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