... collector currents to 300mA. • Sourced from process 68. • See PN200 for Characteristics. Product Attributes Select All Categories Discrete Semicon...
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2SA1943-O(Q) (BJT) 230 V 15 A 30MHz 150 W Through Hole Manufacturer: Toshiba Product Category: s - BJT RoHS: ...
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NPN Texas Instruments/TI TPS54418ARTER Vin (Min) (V) 2.95 Vin (Max) (V) 6 Vout (Min) (V) 0.8 Vout (Max) (V) 4.5 Iout (Max) (A) 4 ......
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... (BJT) 100V 6A 65W Features ■ Complementary -NPN devices ■ New enhanced series ■ High switching speed ■ hF...
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... Discrete Semiconductor Products Complementary power Description: The devices are manufactured in planar technol...
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... Discrete Semiconductor Products Complementary power Description: The devices are manufactured in planar technol...
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... for automatic insertion For Switching and AF Amplifier Applications Our goods: Active components (IC integrated circuits, memory chips, diodes, tr...
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...ICS 2SB1561 - BJT ROHS 2SB1424 Low VCE(sat) Product Paramenters Manufacturer: ROHM Semiconductor Product Categor...
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ZX5T1951GTA (BJT) 60 V 6 A 120MHz 1.6 W SOT-223-3 Features • BVCEO > -60V • IC = -6A Continuous Collector Current • Low Saturat...
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... MJD45H11 Fairchild TO-252 New and Original in stock • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK:...
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Product Detail Product Category: Bipolar Transistors Mounting Style: Through Hole Transistor Polarity: PNP Configuration: Single Emitter Voltage VCEO ...
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Vishay IRF740PBF Npn And 400V 10A Power MOSFET 125W 550 MOhms Description Third generation power MOSFETs from Vishay provide the design...
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... or amplification needs? Look no further than the BCX56-16 NPN silicon AF . These are complementary to the BCX53-16 PNP tran...
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Bipolar Junction Transistor MMBT2222ALT1G Single Transistor Bipolar General Purpose NPN 40 V 300 MHz Product description Part number MMBT2222ALT1G is ...
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MMDT3946DW DUAL TRANSISTOR (NPN+PNP) SOT-363 MMDT3946DW DUAL NPN and PNP Transistor SOT 363 for Low Power Amplification FEATURES Complementary Pair On...
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Pre-Biased (BJT) - Pre-Biased 100 mA 250 MHz 150 mW Surface Mount EMT3...
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...
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2N3439 Discrete Semiconductors Through Hole TO-39-3 Manufacturer: original Product Category: - BJT RoHS: N Mou...
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... MOS . Specification Of IXBH10N300HV Part Number IXBH10N300HV Voltage - Collector Emitter Breakdown (Max) 3000 V Current - Collector (Ic)...
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