trench gate mosfet

... linear power power FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low drive • SOT23-6 packa...

... On) 18V Rds On (Max) @ Id, Vgs 34mOhm @ 38.3A, 18V Vgs(th) (Max) @ Id 5.7V @ 11mA Charge (Qg) (Max)...

... Circuits Power 3.0 A, 60 V, Logic Level, N−Channel SOT−223 Designed for low voltage, high speed switching applications in power supplies, ....

High Power MOSFET NVJS4151P Single P−Channel Trench Power MOSFET -20V -4.1A 67mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on sem...

CJ2310 S10 NPN PNP Transistors N-Channel Plastic-Encapsulate S DESCRIPTION The CJ2310 uses advanced technology to provide excellen...

JUYI N Channel Super Trench Power MOSFET with fast switching and reverse body recovery GENERAL DESCRIPTION The product utilizes the latest super trenc...

Product Description: The low voltage MOSFET is a semiconductor device that has become an indispensable component in modern electronic circuits. It is ...

High Strength Sand Casting Ductile Iron Trench Gate and Drain Grating About Us Gravity casting ductile iron sand casting, we have our own design team ...

CM150DU-12F is a Design Dual IGBTMOD™ 150 Amperes/600 Volts . Part NO: CM150DU-12F Brand: MITSUBISHI Date Code: 02+ Quality ......

TC4420CPA Low-Side Gate Mosfet Driver IC Non-Inverting 8-PDIP General Description The TC4420/TC4429 are 6A (peak), single-output MOSFET drivers. The T...

VND10N06TR-E Power Management ICs Product Overview: The VND10N06TR-E is a power management integrated circuit (IC) designed for use in power control a...

RF Mosfet 4 V 10 mA 200MHz SOT-143B...

...-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 8.5 A Rds On - Drain-Source Resistance: 20 mOhms Vgs - -Source Voltage:...

... Description The WSF6012 is the highest performance N-ch and P-ch with extreme high cell density , which provide excellent RDSO...

Advanced Technology Enhancement Mode Power N Channel For Power Management Id:80A Vdss:30V Rdson-typ(@Vgs=10V):3.82mΩ Features: Advanced ...

... Drain Current: 600 mA, 500 mA Rds On - Drain-Source Resistance: 470 mOhms, 1.02 Ohms Vgs - -Source Voltage: - 8 V, + 8 V Vgs th -...

...technology from a and a bipolar transistor and are designed for high voltage/high current applications. The Model BID IGBTs use advance...

... N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 Power in a TO-220 package General Description : This device is an N-channel Power ...

...y low on-resistance Very low charge High avalanche ruggedness Low drive power loss This device is an N-channel Power developed usi...

20V N+N-Channel Enhancement Mode DESCRIPTION The 8H02ETSuses advanced technology to provide excellent RDS(ON), low charge and opera...