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what is power mosfet

1 - 20 Results for what is power mosfet from 11346 Products

... Heat Dissipation Metal Oxide Product Description: The is a type N device and has a gate-source voltage (Vgs) of ±30V, ma...

Time : Apr,07,2025
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... Product Description: High is a type of with high efficiency, which is widely used in applications such as Solar Inverter...

Time : Dec,26,2024
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... Circuits 3.0 A, 60 V, Logic Level, N−Channel SOT−223 Designed for low voltage, high speed switching applications in supplies, c...

Time : Dec,09,2024
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... 4A 650V Applications In Switching Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L DESCRIPTION The F4N65L is a h...

Time : Dec,09,2024
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High FDI045N10A N-Channel PowerTrench 100V, 164A, 4.5mΩ High FDI045N10A N-Channel PowerTrench 100V, 164A, 4....

Time : Dec,09,2024
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...-source voltage of 55V, and maximum gate threshold voltage of 2.5V. 3. It has a low on-resistance of 0.022 ohms and a high dissipation of 12W...

Time : Dec,09,2024
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IXFK27N80Q N Channel 800V 27A 0.32 Rds HiPerFET Description HiPerFETTM Q-CLASS Single Die N-Channel Enhancem...

Time : Dec,09,2024
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... 55V 49A 94W Through Hole TO-220 Description Advanced HEXFET® from International Rectifier utilize advanced processing te...

Time : Dec,09,2024
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... N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 in a TO-220 package General Description : This device is an N-channel ...

Time : Dec,09,2024
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...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This is usually used at high speed switchin...

Time : Dec,09,2024
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IR21094STRPBF high voltage, high speed and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed and IGBT d...

Time : Dec,09,2024
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...HEXFET® Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Para...

Time : Dec,09,2024
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... TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Stat...

Time : Dec,09,2024
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... loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing ......

Time : Dec,09,2024
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... density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device ...

Time : Apr,14,2025
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Motor Driver VNH7100BASTR 4V-28V 16SO with PWM and Power MOSFET #detail_decorate_root .magic-0{border-bottom-style:dashed;border-bottom-color:#fff;fon...

Time : Dec,09,2024
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BSS138K N-Channel Enhancement Mode FEATURES 1. VDS = 50V,ID = 0.22A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating:HBM 2300V 2. ...

Time : Dec,09,2024
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... your electronic devices, then the IRFP460LC might be just what you need. This high-performance transistor is ideal for use in a ...

Time : Dec,09,2024
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... Transistors, package is TO-263-8. Specification Of SCT4018KEC11 Part Number: SCT4018KEC11 Fall Time: 14 ns Forward Transconductance - Min: ...

Time : Apr,14,2025
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... Single P-CH 20V 9A 8WDFN P-Channel Products Description: 1. -20V,-15A,6.7 Mω, P-channel 2. P-channel 20V 9A (Ta) 840mW (Ta) Su...

Time : Dec,09,2024
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